Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates (2019)
Attributed to:
Fundamental studies of zincblende nitride structures for optoelectronic applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2019.125167
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2019.125167
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth