Novel Tunnel-Contact-Controlled IGZO Thin-Film Transistors with High Tolerance to Geometrical Variability. (2019)
Attributed to:
The Physics and Engineering of Oxide Semiconductors for Large-Area CMOS
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/adma.201902551
PubMed Identifier: 31309623
Publication URI: http://europepmc.org/abstract/MED/31309623
Type: Journal Article/Review
Volume: 31
Parent Publication: Advanced materials (Deerfield Beach, Fla.)
Issue: 36
ISSN: 0935-9648