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Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study (2019)

First Author: Zhang Z

Attributed to: Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2019.111039

Publication URI: http://dx.doi.org/10.1016/j.mee.2019.111039

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering