Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study (2019)
Attributed to:
Integration of Novel Materials in Spintronic Devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2019.111039
Publication URI: http://dx.doi.org/10.1016/j.mee.2019.111039
Type: Journal Article/Review
Parent Publication: Microelectronic Engineering