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Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (2019)

First Author: Partida-Manzanera T

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5049220

Publication URI: http://dx.doi.org/10.1063/1.5049220

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 3