Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates (2019)
Attributed to:
Realising a solid state photomultiplier and infrared detectors through Bismide containing semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5097138
Publication URI: http://dx.doi.org/10.1063/1.5097138
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 8