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Analysis of Gain Variation With Changing Supply Voltages in GaN HEMTs for Envelope Tracking Power Amplifiers (2019)

First Author: Alt A

Attributed to: Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tmtt.2019.2916404

Publication URI: http://dx.doi.org/10.1109/tmtt.2019.2916404

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Microwave Theory and Techniques

Issue: 7