Principles of High-Resolution Dopant Profiling in the Scanning Helium Ion Microscope, Image Widths, and Surface Band Bending (2019)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2019.2940562
Publication URI: http://dx.doi.org/10.1109/ted.2019.2940562
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 11