Principles of High-Resolution Dopant Profiling in the Scanning Helium Ion Microscope, Image Widths, and Surface Band Bending (2019)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2019.2940562

Publication URI: http://dx.doi.org/10.1109/ted.2019.2940562

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 11