Solution-Processed HfO x for Half-Volt Operation of InGaZnO Thin-Film Transistors (2019)
Attributed to:
Quasi-ambient bonding to enable cost-effective high temperature Pb-free solder interconnects
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acsaelm.9b00325
Publication URI: http://dx.doi.org/10.1021/acsaelm.9b00325
Type: Journal Article/Review
Parent Publication: ACS Applied Electronic Materials
Issue: 8