Modeling of Diffusion and Incorporation of Interstitial Oxygen Ions at the TiN/SiO2 Interface. (2019)

First Author: Cottom J
Attributed to:  Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acsami.9b10705

PubMed Identifier: 31532611

Publication URI: http://europepmc.org/abstract/MED/31532611

Type: Journal Article/Review

Volume: 11

Parent Publication: ACS applied materials & interfaces

Issue: 39

ISSN: 1944-8244