Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (2019)
Attributed to:
High-throughput screening of polycrystalline solar absorbers (Ext.)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/aelm.201900484
Publication URI: http://dx.doi.org/10.1002/aelm.201900484
Type: Journal Article/Review
Parent Publication: Advanced Electronic Materials
Issue: 10