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Tunnel Magnetoresistance in the Magnetic Tunnel Junctions with an Amorphous Boron Nitride Barrier Formed via Nitrogen Diffusion (2019)

First Author: Ichinose T

Attributed to: Spintronic Devices for Integrated Logic Circuits funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acsaelm.9b00431

Publication URI: http://dx.doi.org/10.1021/acsaelm.9b00431

Type: Journal Article/Review

Parent Publication: ACS Applied Electronic Materials

Issue: 11