Tunnel Magnetoresistance in the Magnetic Tunnel Junctions with an Amorphous Boron Nitride Barrier Formed via Nitrogen Diffusion (2019)
Attributed to:
Spintronic Devices for Integrated Logic Circuits
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acsaelm.9b00431
Publication URI: http://dx.doi.org/10.1021/acsaelm.9b00431
Type: Journal Article/Review
Parent Publication: ACS Applied Electronic Materials
Issue: 11