Tunnel Magnetoresistance in the Magnetic Tunnel Junctions with an Amorphous Boron Nitride Barrier Formed via Nitrogen Diffusion (2019)

First Author: Ichinose T
Attributed to:  Spintronic Devices for Integrated Logic Circuits funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acsaelm.9b00431

Publication URI: http://dx.doi.org/10.1021/acsaelm.9b00431

Type: Journal Article/Review

Parent Publication: ACS Applied Electronic Materials

Issue: 11