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Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs (2020)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tie.2019.2945299

Publication URI: http://dx.doi.org/10.1109/tie.2019.2945299

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Industrial Electronics

Issue: 9