Single step ohmic contact for heavily doped n-type silicon (2020)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.apsusc.2019.144686
Publication URI: http://dx.doi.org/10.1016/j.apsusc.2019.144686
Type: Journal Article/Review
Parent Publication: Applied Surface Science