Ambipolar and Robust WSe 2 Field-Effect Transistors Utilizing Self-Assembled Edge Oxides (2019)
Attributed to:
Multi-scale ANalysis for Facilities for Energy STorage (Manifest)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/admi.201901628
Publication URI: http://dx.doi.org/10.1002/admi.201901628
Type: Journal Article/Review
Parent Publication: Advanced Materials Interfaces
Issue: 1