Ambipolar and Robust WSe 2 Field-Effect Transistors Utilizing Self-Assembled Edge Oxides (2019)

First Author: Xu H

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/admi.201901628

Publication URI: http://dx.doi.org/10.1002/admi.201901628

Type: Journal Article/Review

Parent Publication: Advanced Materials Interfaces

Issue: 1