Modeling of Intrinsic Electron and Hole Trapping in Crystalline and Amorphous ZnO (2019)
Attributed to:
Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/aelm.201900760
Publication URI: http://dx.doi.org/10.1002/aelm.201900760
Type: Journal Article/Review
Parent Publication: Advanced Electronic Materials
Issue: 1