Modeling of Intrinsic Electron and Hole Trapping in Crystalline and Amorphous ZnO (2019)

First Author: Mora-Fonz D
Attributed to:  Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/aelm.201900760

Publication URI: http://dx.doi.org/10.1002/aelm.201900760

Type: Journal Article/Review

Parent Publication: Advanced Electronic Materials

Issue: 1