The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment (2020)
Attributed to:
Ultra-high voltage (>30KV) power devices through superior materials for HVDC transmission
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5133739
Publication URI: http://dx.doi.org/10.1063/1.5133739
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 2