A b i n i t i o treatment of silicon-hydrogen bond rupture at Si / SiO 2 interfaces (2019)
Attributed to:
Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.100.195302
Publication URI: http://dx.doi.org/10.1103/physrevb.100.195302
Type: Journal Article/Review
Parent Publication: Physical Review B
Issue: 19