Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors (2018)

First Author: Loto O
Attributed to:  Delta-doped diamond structures for high performance electronic devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2018.2847340

Publication URI: http://dx.doi.org/10.1109/ted.2018.2847340

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 8