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Impact of the Input Impedance on the Linearity of Supply Modulated GaN HEMT Power Amplifiers (2019)

First Author: Alt A

Attributed to: Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.23919/eumc.2019.8910882

Publication URI: http://dx.doi.org/10.23919/eumc.2019.8910882

Type: Conference/Paper/Proceeding/Abstract