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The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs (2020)

First Author: Yang F

Attributed to: High Performance Buffers for RF GaN Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2020.2968212

Publication URI: http://dx.doi.org/10.1109/ted.2020.2968212

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 3