Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers (2019)
Attributed to:
GaN Electronics: RF Reliability and Degradation Mechanisms
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.microrel.2019.02.012
Publication URI: http://dx.doi.org/10.1016/j.microrel.2019.02.012
Type: Journal Article/Review
Parent Publication: Microelectronics Reliability