Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging (2018)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5042515
Publication URI: http://dx.doi.org/10.1063/1.5042515
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 6