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Optimization of 1.3 µ m InAs/GaAs quantum dot lasers epitaxially grown on silicon: taking the optical loss of metamorphic epilayers into account (2018)

First Author: Wang J

Attributed to: Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1555-6611/aae194

Publication URI: http://dx.doi.org/10.1088/1555-6611/aae194

Type: Journal Article/Review

Parent Publication: Laser Physics

Issue: 12