Achieving wavelength emission beyond the C-band from Type-II InAs-GaAsSb quantum dots grown monolithically on silicon substrate (2019)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jallcom.2018.08.276
Publication URI: http://dx.doi.org/10.1016/j.jallcom.2018.08.276
Type: Journal Article/Review
Parent Publication: Journal of Alloys and Compounds