Achieving wavelength emission beyond the C-band from Type-II InAs-GaAsSb quantum dots grown monolithically on silicon substrate (2019)

First Author: Salhi A
Attributed to:  Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jallcom.2018.08.276

Publication URI: http://dx.doi.org/10.1016/j.jallcom.2018.08.276

Type: Journal Article/Review

Parent Publication: Journal of Alloys and Compounds