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Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers. (2019)

First Author: Salhi A

Attributed to: Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1186/s11671-019-2877-2

PubMed Identifier: 30707322

Publication URI: http://europepmc.org/abstract/MED/30707322

Type: Journal Article/Review

Volume: 14

Parent Publication: Nanoscale research letters

Issue: 1

ISSN: 1556-276X