Physical modelling of InGaAs-InAlAs APD and PIN photodetectors for >25 Gb/s data rate applications (2019)

First Author: Abdulwahid O
Attributed to:  Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1049/iet-opt.2018.5030

Publication URI: http://dx.doi.org/10.1049/iet-opt.2018.5030

Type: Journal Article/Review

Parent Publication: IET Optoelectronics

Issue: 1