Tuning the optical properties of InAs QDs by means of digitally-alloyed GaAsSb strain reducing layers (2018)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5048475
Publication URI: http://dx.doi.org/10.1063/1.5048475
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 10