Tuning the optical properties of InAs QDs by means of digitally-alloyed GaAsSb strain reducing layers (2018)

First Author: Salhi A
Attributed to:  Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5048475

Publication URI: http://dx.doi.org/10.1063/1.5048475

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 10