📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Tuning the optical properties of InAs QDs by means of digitally-alloyed GaAsSb strain reducing layers (2018)

First Author: Salhi A

Attributed to: Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5048475

Publication URI: http://dx.doi.org/10.1063/1.5048475

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 10