Low temperature growth and optical properties of a-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition (2019)
Attributed to:
Sir Henry Royce Institute - Cambridge Equipment
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2019.125254
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2019.125254
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth