Displacement Talbot lithography for nano-engineering of III-nitride materials. (2019)

First Author: Coulon PM
Attributed to:  Manufacturing of nano-engineered III-N semiconductors: Equipment Business Case funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/s41378-019-0101-2

PubMed Identifier: 31814992

Publication URI: http://europepmc.org/abstract/MED/31814992

Type: Journal Article/Review

Volume: 5

Parent Publication: Microsystems & nanoengineering

ISSN: 2055-7434