Displacement Talbot lithography for nano-engineering of III-nitride materials. (2019)
Attributed to:
Manufacturing of nano-engineered III-N semiconductors: Equipment Business Case
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1038/s41378-019-0101-2
PubMed Identifier: 31814992
Publication URI: http://europepmc.org/abstract/MED/31814992
Type: Journal Article/Review
Volume: 5
Parent Publication: Microsystems & nanoengineering
ISSN: 2055-7434