The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation (2020)

First Author: Jahdi S
Attributed to:  Underpinning Power Electronics 2012: Components Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tie.2019.2922918

Publication URI: http://dx.doi.org/10.1109/tie.2019.2922918

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Industrial Electronics

Issue: 6