High-temperature electronic devices enabled by hBN-encapsulated graphene (2019)

First Author: Šiškins M

Attributed to: The National Graphene Institute funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5088587

Publication URI: http://dx.doi.org/10.1063/1.5088587

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 12