Extremely high-gain source-gated transistors. (2019)

First Author: Zhang J
Attributed to:  The National Graphene Institute funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1073/pnas.1820756116

PubMed Identifier: 30804190

Publication URI: http://europepmc.org/abstract/MED/30804190

Type: Journal Article/Review

Volume: 116

Parent Publication: Proceedings of the National Academy of Sciences of the United States of America

Issue: 11

ISSN: 0027-8424