Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate (2019)
Attributed to:
The Royce: Capitalising on the investment
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5121637
Publication URI: http://dx.doi.org/10.1063/1.5121637
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 20