📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

A Planar Distributed Channel AlGaN/GaN HEMT Technology (2019)

First Author: Elksne M

Attributed to: Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient Operation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2019.2907152

Publication URI: http://dx.doi.org/10.1109/ted.2019.2907152

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 5