A Planar Distributed Channel AlGaN/GaN HEMT Technology (2019)

First Author: Elksne M
Attributed to:  Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient Operation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2019.2907152

Publication URI: http://dx.doi.org/10.1109/ted.2019.2907152

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 5