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Room-temperature local magnetoresistance effect in n -Ge devices with low-resistive Schottky-tunnel contacts (2019)

First Author: Tsukahara M

Attributed to: Half-metallic ferromagnets: materials fundamentals for next-generation spintronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.7567/1882-0786/ab0252

Publication URI: http://dx.doi.org/10.7567/1882-0786/ab0252

Type: Journal Article/Review

Parent Publication: Applied Physics Express

Issue: 3