A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability (2020)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/TED.2019.2954911

Publication URI: http://dx.doi.org/10.1109/TED.2019.2954911

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 1