Design Optimization of 1.2kV 4H-SiC Trench MOSFET (2019)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/MSF.963.605

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/MSF.963.605

Type: Journal Article/Review

Parent Publication: Materials Science Forum