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Donor and acceptor characteristics of native point defects in GaN (2019)

First Author: Xie Z

Attributed to: HPC simulations of complex solids and clusters using static lattice techniques funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ab2033

Publication URI: http://dx.doi.org/10.1088/1361-6463/ab2033

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 33