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Random telegraph signals caused by a single dopant in a metal-oxide-semiconductor field effect transistor at low temperature (2020)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0009585

Publication URI: http://dx.doi.org/10.1063/5.0009585

Type: Journal Article/Review

Parent Publication: AIP Advances

Issue: 5