Monolayer MoSe2-Based Tunneling Field Effect Transistor for Ultrasensitive Strain Sensing (2020)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2020.2982732

Publication URI: http://dx.doi.org/10.1109/ted.2020.2982732

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 5