Formation of voids in selective area growth of InN nanorods in SiN x on GaN templates (2020)
Attributed to:
Manufacturing of nano-engineered III-N semiconductors: Equipment Business Case
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/2399-1984/ab8450
Publication URI: http://dx.doi.org/10.1088/2399-1984/ab8450
Type: Journal Article/Review
Parent Publication: Nano Futures
Issue: 2