Formation of voids in selective area growth of InN nanorods in SiN x on GaN templates (2020)

First Author: Zeghouane M
Attributed to:  Manufacturing of nano-engineered III-N semiconductors: Equipment Business Case funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/2399-1984/ab8450

Publication URI: http://dx.doi.org/10.1088/2399-1984/ab8450

Type: Journal Article/Review

Parent Publication: Nano Futures

Issue: 2