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Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon (2020)

First Author: Benakaprasad B

Attributed to: Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2020.2968186

Publication URI: http://dx.doi.org/10.1109/ted.2020.2968186

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 3