Exploring an Approach toward the Intrinsic Limits of GaN Electronics. (2020)

First Author: Jiang S
Attributed to:  Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acsami.9b19697

PubMed Identifier: 32090550

Publication URI: http://europepmc.org/abstract/MED/32090550

Type: Journal Article/Review

Volume: 12

Parent Publication: ACS applied materials & interfaces

Issue: 11

ISSN: 1944-8244