Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching (2020)
Attributed to:
Non-polar nitride quantum dots for application in single photon sources
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5142491
Publication URI: http://dx.doi.org/10.1063/1.5142491
Type: Journal Article/Review
Parent Publication: APL Materials
Issue: 3